unisonic technologies co., ltd he8050 npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2009 unisonic technologies co., ltd qw-r211-018,c low voltage high current small signal npn transistor ? description the utc he8050 is a low voltage high current small signal npn transistor, designed for class b push-pull 2w audio amplifier for portable radio and general purpose applications. ? features *collector current up to 1.5a *collector-emitter voltage up to 25 v *complimentary to utc he8550 ? ordering information ordering number pin assignment normal lead free plating halogen free package 1 2 3 packing he8050-x-ab3-r he8050l-x-ab3-r he8050g-x-ab3-r sot-89 b c e tape reel he8050-x-ae3-r he8050l-x-ae3-r he8050g-x-ae3-r sot-23 e b c tape reel he8050-x-t92-b he8050l-x-t92-b he 8050g-x-t92-b to-92 e c b tape box he8050-x-t92-k he8050l-x-t92-k he 8050g-x-t92-k to-92 e c b bulk he8050-x-t9n-b he8050l-x-t9n-b he8050g-x-t9n-b to-92nl e c b tape box HE8050-X-T9N-K he8050l-x-t9n-k he8050g-x-t9n-k to-92nl e c b bulk ? marking (for sot-23 package) da l: lead free g: halogen free
he8050 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r211-018,c ? absolute maximum ratings (ta = 25 c) parameter symbol ratings unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 6 v sot-23 350 mw sot-89 500 mw collector dissipation to-92/to-92nl p c 1 w collector current i c 1.5 a junction temperature t j +150 c storage temperature t stg -65 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta= 25 c, unless otherwise specified.) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =100 a,i e =0 40 v collector-emitter breakdown voltage bv ceo i c =2ma,i b =0 25 v emitter-base breakdown voltage bv ebo i e =100 a,i c =0 6 v collector cut-off current i cbo v cb =35v,i e =0 100 na emitter cut-off current i ebo v eb =6v,i c =0 100 na h fe1 v ce =1v,i c =5ma 45 135 h fe2 v ce =1v,i c =100ma 85 160 500 dc current gain h fe3 v ce =1v,i c =800ma 40 110 collector-emitter satu ration voltage v ce(sat) i c =800ma,i b =80ma 0.5 v base-emitter satura tion voltage v be(sat) i c =800ma,i b =80ma 1.2 v base-emitter satura tion voltage v be v ce =1v,i c =10ma 1.0 v current gain bandwidth product f t v ce =10v,i c =50ma 100 mhz output capacitance cob v cb =10v,i e =0 f=1mhz 9.0 pf ? classification of h fe2 rank c d e range 120-200 160-300 250-500
he8050 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r211-018,c ? typical characteristics static characteristics collector-emitter voltage ( v) collector current, ic (ma) 0 0.4 0.8 1.2 1.6 2.0 0 0.1 0.2 0.3 0.4 0.5 i b =0.5ma i b =1.0ma i b =1.5ma i b =2.0ma i b =2.5ma i b =3.0ma dc current gain collector current, ic (ma) dc current gain, h fe 10 2 10 1 10 0 10 3 10 3 10 2 10 1 10 0 10 -1 v ce =1v current gain-bandwidth product collector output capacitance collector current, ic (ma) 10 0 10 1 10 2 10 3 current gain-bandwidth product, f t (mhz) 10 0 10 1 10 2 v ce =10v collector-base voltage (v) capacitance, cob (pf) 10 3 10 3 10 0 10 1 10 2 10 0 10 1 10 2 10 3 f=1mhz i e =0 base-emitter on voltage 10 0 10 1 10 2 10 3 collector current, ic (ma) base-emitter voltage (v) 0.2 0.4 0.6 0.8 1.0 1.2 v ce =1v collector current, ic (ma) 10 3 10 2 10 1 10 0 10 -1 saturation voltage (mv) 10 1 10 2 10 3 10 4 saturation voltage v be(sat) ic=10*i b v ce(sat)
he8050 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r211-018,c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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